AM3455P these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are power switch, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) ( ? )i d (a) 0.112 @ v gs = 10 v 3.4 0.172 @ v gs = 4.5v 2.7 product summary -30 ?low r ds(on) provides higher efficiency and extends battery life ? low gate charge ? fast switch ? miniature tsop-6 surface mount package saves board space notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol maximum units v ds -30 v gs 20 t a =25 o c3.4 t a =70 o c2.6 i dm 20 i s 1.7 a t a =25 o c2.0 t a =70 o c1.3 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a symbol maximum units t <= 5 sec 62.5 steady-state 110 thermal resistance ratings parame te r o c/w maximum junction-to-ambient a r thja 1 2 34 5 6 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max gate-thres hold voltage v gs(th) v ds = v gs , i d = 250 ua 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = -24 v, v gs = 0 v 1 v ds = -24 v, v gs = 0 v, t j = 55 o c 50 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 10 a v gs = 10 v, i d = 3.4 a 112 v gs = 4.5 v, i d = 2.7 a 172 forward tranconductance a g fs v ds = 4.5 v, i d = 3.4 a 6 s diode forward voltage v sd i s = 0.75 a, v gs = 0 v 1.2 v total gate charge q g 4.5 gate-source charge q gs 1.4 gate-drain charge q gd 2.4 turn-on delay time t d(on) 9 ris e time t r 12 turn-off delay time t d(off) 25 fall-time t f 14 m ? parame te r limits unit v dd = 30 v, r l = 30 ? , i d = 1 a, v gen = 10 v v ds = 30 v, v gs = 5 v, i d = 3.4 a nc ns dynamic b specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol drain-source on-resistance a r ds(on) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com AM3455P product specification
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